Molybdenum disulfide muaj kev ua haujlwm zoo heev li 2D cov ntaub ntawv semiconductor, uas yog, lawv tau yooj yim bent. Cov khoom hluav taws xob tuaj yeem txav tau sai sai hauv cov khoom siv li ntawd. Nyob rau tib lub sijhawm, xws li semiconductors yog pob tshab vim hais tias lawv tsuas yog hais txog ib qho me me ntsis atom. Cov nta no ua rau lawv zoo siab rau cov lus yooj yim OLED. Txawm li cas los xij, thaum cov tuam txhab sim ua cov molybdenum disulfide mus rau hauv transistors uas tswj OLED pixels, qhov kev ua haujlwm ntawm molybdenum disulfide (MoS2) thiab qhov chaw thiab ntws ntawm qhov transistor yuav siab heev, ua cov khoom zoo no ua tsis tau. Tau lub. Tam sim no, Korean engineers tau pom ib txoj kev los thov molybdenum disulfide transistors rau cov lus yooj yim OLED. Lawv siv qhov no transistor tsim ib qho yooj yim 6 x 6 dot matrix ntawm ib daim ntawv yas ntsuas tsuas yog 7 microns tuab. Daim ntawv no yuav muab siv rau daim tawv nqaij ntawm tib neeg. Cov ntaub ntawv no yooj yooj yim rau cov ntaub ntawv yas yog muag heev thiab tuaj yeem tsis tau khoov ntawm khoov ib sab ntawm tsawg dua 1 cm.
Jong-Hyun Ahn, ib tug kws tshaj lij electronics ntawm Yonsei University hauv Seoul, tau piav tias "kev yoojyim kev khiav haujlwm" yog qhov tseem ceeb uas lawv yuav tsum tau ua. Cov cuab yeej no yog ntsuas tus nqi ntawm cov nqi uas dhau ntawm lub semiconductor. Piv txwv, cov khoom siv los ua feem ntau cov chips, crystalline silicon, muaj ib qhov kev sib tw ntawm 1400 square centimeters ib qhov volt-thib ob (cm2 / Vs). Cov semiconductors uas tsim tau cov duab pob dav yog cov tshuab rau kev hloov thiab taws pixels. Qhov yuav tsum tau muaj lub tsheb khiav yuav tsum muaj peev xwm tsav tsheb txaus tam sim no los khiav cov pixels no, nrog rau cov kev yees duab txaus. "Rau cov tsoos LCD txwm, lawv cov backsheets yuav ua los ntawm amorphous silicon nrog qis cab kuj mobility," Ahn hais. Cov khoom muaj ib qho hluav taws xob muaj txij li 1 cm2 / V-sec. Tab sis OLED cov lus yuav tsum muaj dua cov cab kuj. Cov lag luam OLED, suav nrog LG thiab Samsung, siv cov ntaub ntawv pov thawj xws li polysilicon (> 10 cm 2 / V-sec) thiab oxide semiconductors. Txawm li ntawd los, "cov ntaub ntawv no nyuaj thiab txhav," Ahn hais. Lawv tuaj yeem khoov tau ib qho twg, tab sis lawv tsis tuaj yeem khi ntau dua.
Ib qho molybdenum disulfide transistor yog cov zauv los ntawm ob lub tsho ntawm aluminium oxide (Al2O3) los ntawm kev qhia qis thiab qis. Qhov cuab yeej no muaj qhov siab me me, thiab kev siab loj yog ib qho tseem ceeb rau kev xa tawm tam sim no mus rau lub pixels ntawm cov duab OLED. Ua kom pom cov duab OLD yooj yim ultra-thin, Ahn thiab nws pab neeg yuav tsum tso tawm molybdenum disulfide los ntawm transistor uas "ntes tau" nws. Ahn tau hais tias: "Kev tiv tauj ntawm tus kabmob molybdenum disulfide thiab cov transistor electrode yog siab heev, thiab lub siab ua haujlwm yuav txo qhov kev yoojyim ntawm lub cev molybdenum disulfide transistor." Qhov tseem ceeb los daws qhov teeb meem yog kom paub txog tias 2D semiconductors yog cov teeb meem nyob ib puag ncig. . Tsis zoo li qub li ib txwm tso ntawm transistors ntawm lub pob zeb ntawm silicon oxide, Ahn pab neeg siv cov ntaub ntawv uas yooj yim heev thiab tswj tau yooj yim. Lawv tau muab cov khoom txawb hauv ob lub thauv rau ntawm cov kab yas txhuas oxide. Qhov nruab nrab ntawm txhuas oxide thiab cov molybdenum disulfide ua rau cov electrons hauv lub semiconductor, zoo li qhov phenomenon ntawm doping chemicals rau hauv cov khoom silicon kom nws ib semiconductor. Qhov no li overcomes qhov teeb meem ntawm kev tiv thaiv kev sib raug zoo thiab pab txoj kev them nqi pov npav mobility. Tsis tas li ntawd, cov khoom siv dielectric tsis tsim cov pob zeb uas yuav cuab qhov cuab tam, ntxiv zuj zus mus rau 17 mus rau 20 square centimeters ib qhov siab-ob.
Lawv tau qhia txog qhov tsim muaj rau cov phau ntawv hu ua Science Advances lub lim tiam no.
