ITO iav Nyob rau hauv cov yeeb yam hlau oxide, Sn-doped In2O3 (ITO) zaj duab xis muaj lub siab tshaj plaws thiab qhov zoo tshaj plaws cov khoom siv, thiab nws yog ib qho yooj yim rau etch ib tug qauv zoo nyob hauv cov kua qaub. Nws qhov kev xa xov tau mus txog ntau tshaj 90%. Kev xa tawm thiab kev ua haujlwm ntawm ITO raug tswj los ntawm qhov ratio ntawm In2O3 rau Sn2O3, feem ntau yog SnO2: In2O3 = 1: 9.
ITO yog N-hom oxide semiconductor-Indium Tin Oxide. ITO nyias zaj duab xis yog ib qho tseem ceeb ntawm cov yeeb yaj kiab hluav taws xob ua yeeb yam. Muaj ntau qhov ob qho tseem ceeb qhia tau hais tias: kev tiv taus thiab lub teeb hloov.
Tam sim no, qhov kev ua yeeb yam ntawm ITO film feem ntau yog kwv yees li 5 * 10-4, nyiam dua txog 5 * 10-5, uas yog nyob ze rau lub cev tiv thaiv cov hlau. Hauv daim ntawv sau npe, cov ntawv ua haujlwm feem ntau siv los qhia txog cov cuab yeej hluav taws xob ntawm ITO. Qhov kev xa tawm tuaj yeem ncav cuag tshaj 90%. Lub xa tawm thiab ua haujlwm ntawm ITO zaj yeeb yaj duab yog tshuaj los ntawm kev sib piv ntawm In2O3 thiab Sn2O3, feem. Nce qhov piv ntawm yttrium tuaj yeem ua rau kev hloov ntawm ITO, feem ntau yog Sn2O3: In2O3 = 1: 9. Vim lub thickness ntawm tin oxide tshaj 200 Å, lub transparency yog feem ntau tsis zoo txaus txawm hais tias tus conductivity yog zoo.
ITO muaj dawb ions ntawm cov nplaim thiab yog nws qhov kev sib tshuam redox thiab ITO corrosion thaum nws tau txais kev pab. Yog li, peb tsis tas yuav kov cov electrode ntawm lub LCD nrog liab txhais tes vim hais tias cov halogen (cl element) hauv cov neeg tawm hws yog lub yeeb ncuab ntuj ntawm ITO.
